Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. ALD110914PAL

Advanced Linear Devices Inc. - ALD110914PAL

KEY Part #: K6521927

ALD110914PAL Pricing (USD) [22346PC Stock]

  • 1 pcs$1.84433
  • 50 pcs$0.97551
Nimewo Pati:
ALD110914PAL
Manifakti:
Advanced Linear Devices Inc.
Detaye deskripsyon:
MOSFET 2N-CH 10.6V 8DIP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - Bipolè (BJT) - Single and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Advanced Linear Devices Inc. ALD110914PAL electronic components. ALD110914PAL can be shipped within 24 hours after order. If you have any demands for ALD110914PAL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ALD110914PAL Atribi pwodwi yo

Nimewo Pati : ALD110914PAL
Manifakti : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 2N-CH 10.6V 8DIP
Seri : EPAD®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Matched Pair
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12mA, 3mA
RD sou (Max) @ Id, Vgs : 500 Ohm @ 5.4V
Vgs (th) (Max) @ Id : 1.42V @ 1µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 2.5pF @ 5V
Pouvwa - Max : 500mW
Operating Tanperati : 0°C ~ 70°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 8-PDIP

Dènye nouvèl

Advanced Energy Thyro-A Thyristor Power Controllers
Ou ka enterese tou
  • J113-D74Z

    ON Semiconductor

    JFET N-CH 35V 625MW TO92.

  • MMBFJ108

    ON Semiconductor

    JFET N-CH 25V 350MW SSOT3.

  • BSR56

    ON Semiconductor

    JFET N-CH 40V 250MW SOT23.

  • MMBF5434

    ON Semiconductor

    JFET N-CH 25V 0.35W SUPERSOT-23.

  • MMBFJ175

    ON Semiconductor

    JFET P-CH 30V 0.225W SOT23.

  • BSR58

    ON Semiconductor

    JFET N-CH 40V 0.25W SOT-23.

Pati cho