IXFN360N10T Pricing (USD) [4454PC Stock]
- 1 pcs$10.21113
- 10 pcs$9.28175
- 25 pcs$8.58569
- 100 pcs$7.50464
- 250 pcs$6.84247
- 500 pcs$6.40102
- Nimewo Pati:
- IXFN360N10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 360A SOT-227B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN360N10T electronic components. IXFN360N10T can be shipped within 24 hours after order. If you have any demands for IXFN360N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN360N10T Atribi pwodwi yo
Nimewo Pati :
IXFN360N10T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 360A SOT-227B
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
360A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.6 mOhm @ 180A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
505nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
36000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
830W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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