[1989PC Stock]
- Nimewo Pati:
- IRFH7110TR2PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N CH 100V 11A PQFN5X6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Tiristors - SCR, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH7110TR2PBF electronic components. IRFH7110TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH7110TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH7110TR2PBF Atribi pwodwi yo
Nimewo Pati :
IRFH7110TR2PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N CH 100V 11A PQFN5X6
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Ta), 58A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
13.5 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3240pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.6W (Ta), 104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (5x6)
Pake / Ka :
8-TQFN Exposed Pad
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