DMTH6016LSDQ-13 Pricing (USD) [165377PC Stock]
- 1 pcs$0.22366
- 2,500 pcs$0.19795
- Nimewo Pati:
- DMTH6016LSDQ-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2 N-CHANNEL 60V 7.6A 8SO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMTH6016LSDQ-13 electronic components. DMTH6016LSDQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH6016LSDQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6016LSDQ-13 Atribi pwodwi yo
Nimewo Pati :
DMTH6016LSDQ-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2 N-CHANNEL 60V 7.6A 8SO
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.6A (Ta)
RD sou (Max) @ Id, Vgs :
19.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
864pF @ 30V
Pouvwa - Max :
1.4W, 1.9W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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