STH185N10F3-6 Pricing (USD) [30216PC Stock]
- 1 pcs$1.36395
- 1,000 pcs$1.21415
- Nimewo Pati:
- STH185N10F3-6
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 100V 180A H2PAK-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STH185N10F3-6 electronic components. STH185N10F3-6 can be shipped within 24 hours after order. If you have any demands for STH185N10F3-6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH185N10F3-6 Atribi pwodwi yo
Nimewo Pati :
STH185N10F3-6
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 100V 180A H2PAK-6
Seri :
Automotive, AEC-Q101, STripFET™ F3
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.5 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
114.6nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6665pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
315W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
H2PAK-6
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab)
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