PSMN6R3-120ESQ Pricing (USD) [33519PC Stock]
- 1 pcs$1.22955
- 10 pcs$1.05236
- 100 pcs$0.84565
- 500 pcs$0.65772
- 1,000 pcs$0.54496
- Nimewo Pati:
- PSMN6R3-120ESQ
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 120V 70A I2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - IGBTs - Single and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN6R3-120ESQ electronic components. PSMN6R3-120ESQ can be shipped within 24 hours after order. If you have any demands for PSMN6R3-120ESQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN6R3-120ESQ Atribi pwodwi yo
Nimewo Pati :
PSMN6R3-120ESQ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 120V 70A I2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.7 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
207.1nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
11384pF @ 60V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
405W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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