Vishay Siliconix - SUB75P03-07-E3

KEY Part #: K6408730

[526PC Stock]


    Nimewo Pati:
    SUB75P03-07-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET P-CH 30V 75A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SUB75P03-07-E3 electronic components. SUB75P03-07-E3 can be shipped within 24 hours after order. If you have any demands for SUB75P03-07-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SUB75P03-07-E3 Atribi pwodwi yo

    Nimewo Pati : SUB75P03-07-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET P-CH 30V 75A D2PAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 7 mOhm @ 30A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 240nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 9000pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3.75W (Ta), 187W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : TO-263 (D2Pak)
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB