[857PC Stock]
- Nimewo Pati:
- TPC8018-H(TE12LQM)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 30V 18A SOP8 2-6J1B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPC8018-H(TE12LQM) electronic components. TPC8018-H(TE12LQM) can be shipped within 24 hours after order. If you have any demands for TPC8018-H(TE12LQM), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8018-H(TE12LQM) Atribi pwodwi yo
Nimewo Pati :
TPC8018-H(TE12LQM)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 30V 18A SOP8 2-6J1B
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.6 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2265pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP (5.5x6.0)
Pake / Ka :
8-SOIC (0.173", 4.40mm Width)
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