DF23MR12W1M1B11BOMA1 Pricing (USD) [998PC Stock]
- 1 pcs$46.57521
- Nimewo Pati:
- DF23MR12W1M1B11BOMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET MODULE 1200V 25A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - RF, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies DF23MR12W1M1B11BOMA1 electronic components. DF23MR12W1M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for DF23MR12W1M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF23MR12W1M1B11BOMA1 Atribi pwodwi yo
Nimewo Pati :
DF23MR12W1M1B11BOMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET MODULE 1200V 25A
Seri :
CoolSiC™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A
RD sou (Max) @ Id, Vgs :
45 mOhm @ 25A, 15V
Vgs (th) (Max) @ Id :
5.5V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs :
620nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds :
2000pF @ 800V
Pouvwa - Max :
20mW
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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