TK31N60W,S1VF Pricing (USD) [11067PC Stock]
- 1 pcs$4.09851
- 30 pcs$3.35902
- 120 pcs$3.03128
- 510 pcs$2.53971
- Nimewo Pati:
- TK31N60W,S1VF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N CH 600V 30.8A TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Zener - Single, Diodes - RF, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK31N60W,S1VF electronic components. TK31N60W,S1VF can be shipped within 24 hours after order. If you have any demands for TK31N60W,S1VF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31N60W,S1VF Atribi pwodwi yo
Nimewo Pati :
TK31N60W,S1VF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 600V 30.8A TO247
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
3000pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
230W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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