FQB4N80TM Pricing (USD) [102947PC Stock]
- 1 pcs$0.37982
- 800 pcs$0.34882
- Nimewo Pati:
- FQB4N80TM
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 800V 3.9A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - JFETs, Tiristors - SCR, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQB4N80TM electronic components. FQB4N80TM can be shipped within 24 hours after order. If you have any demands for FQB4N80TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQB4N80TM Atribi pwodwi yo
Nimewo Pati :
FQB4N80TM
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 800V 3.9A D2PAK
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.6 Ohm @ 1.95A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
880pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.13W (Ta), 130W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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