TSM60NB190CI C0G Pricing (USD) [32813PC Stock]
- 1 pcs$1.25599
- Nimewo Pati:
- TSM60NB190CI C0G
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CH 600V 18A ITO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM60NB190CI C0G electronic components. TSM60NB190CI C0G can be shipped within 24 hours after order. If you have any demands for TSM60NB190CI C0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB190CI C0G Atribi pwodwi yo
Nimewo Pati :
TSM60NB190CI C0G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CH 600V 18A ITO220
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
190 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1273pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
33.8W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ITO-220AB
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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