BUK769R6-80E,118 Pricing (USD) [130137PC Stock]
- 1 pcs$0.28564
- 4,800 pcs$0.28422
- Nimewo Pati:
- BUK769R6-80E,118
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 80V 75A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - JFETs, Diodes - RF, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. BUK769R6-80E,118 electronic components. BUK769R6-80E,118 can be shipped within 24 hours after order. If you have any demands for BUK769R6-80E,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK769R6-80E,118 Atribi pwodwi yo
Nimewo Pati :
BUK769R6-80E,118
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 80V 75A D2PAK
Seri :
Automotive, AEC-Q101, TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
75A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9.6 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
59.8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4682pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
182W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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