NTHD4P02FT1G Pricing (USD) [508821PC Stock]
- 1 pcs$0.07269
- 6,000 pcs$0.04653
- Nimewo Pati:
- NTHD4P02FT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 2.2A CHIPFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Diodes - RF, Tiristors - TRIACs, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTHD4P02FT1G electronic components. NTHD4P02FT1G can be shipped within 24 hours after order. If you have any demands for NTHD4P02FT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTHD4P02FT1G Atribi pwodwi yo
Nimewo Pati :
NTHD4P02FT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 2.2A CHIPFET
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.2A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
155 mOhm @ 2.2A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
300pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1.1W (Tj)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ChipFET™
Pake / Ka :
8-SMD, Flat Lead
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