Vishay Siliconix - IRFBE30L

KEY Part #: K6414042

[12892PC Stock]


    Nimewo Pati:
    IRFBE30L
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 800V 4.1A TO-262.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Single, Diodes - RF, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRFBE30L electronic components. IRFBE30L can be shipped within 24 hours after order. If you have any demands for IRFBE30L, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFBE30L Atribi pwodwi yo

    Nimewo Pati : IRFBE30L
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 800V 4.1A TO-262
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 800V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.1A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 3 Ohm @ 2.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 125W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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