Diodes Incorporated - DMS3014SFG-7

KEY Part #: K6395017

DMS3014SFG-7 Pricing (USD) [422123PC Stock]

  • 1 pcs$0.08762
  • 2,000 pcs$0.06325

Nimewo Pati:
DMS3014SFG-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 30V 9.5A POWERDI.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Diodes - Rèkteur - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMS3014SFG-7 electronic components. DMS3014SFG-7 can be shipped within 24 hours after order. If you have any demands for DMS3014SFG-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMS3014SFG-7 Atribi pwodwi yo

Nimewo Pati : DMS3014SFG-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 30V 9.5A POWERDI
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 13 mOhm @ 10.4A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 45.7nC @ 10V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 4310pF @ 15V
Karakteristik FET : Schottky Diode (Body)
Disipasyon Pouvwa (Max) : 1W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI3333-8
Pake / Ka : 8-PowerWDFN