BSC900N20NS3GATMA1 Pricing (USD) [124617PC Stock]
- 1 pcs$0.29681
- Nimewo Pati:
- BSC900N20NS3GATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 15.2A 8TDSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSC900N20NS3GATMA1 electronic components. BSC900N20NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC900N20NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC900N20NS3GATMA1 Atribi pwodwi yo
Nimewo Pati :
BSC900N20NS3GATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 15.2A 8TDSON
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
90 mOhm @ 7.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 30µA
Chaje Gate (Qg) (Max) @ Vgs :
11.6nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
920pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
62.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8
Pake / Ka :
8-PowerTDFN
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