STL3N65M2 Pricing (USD) [207917PC Stock]
- 1 pcs$0.17790
- 3,000 pcs$0.15836
- Nimewo Pati:
- STL3N65M2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 650V 2.3A POWERFLAT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STL3N65M2 electronic components. STL3N65M2 can be shipped within 24 hours after order. If you have any demands for STL3N65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STL3N65M2 Atribi pwodwi yo
Nimewo Pati :
STL3N65M2
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V 2.3A POWERFLAT
Seri :
MDmesh™ M2
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.8 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
155pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
22W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerFlat™ (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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