Deskripsyon :
MOSFET 2N-CH 1200V 100A SIC
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A
RD sou (Max) @ Id, Vgs :
17 mOhm @ 100A, 15V
Vgs (th) (Max) @ Id :
1.6V @ 34mA
Chaje Gate (Qg) (Max) @ Vgs :
330nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds :
8200pF @ 10V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Module