Nimewo Pati :
SI5515CDC-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 20V 4A 1206-8
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
RD sou (Max) @ Id, Vgs :
36 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11.3nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
632pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
1206-8 ChipFET™