Toshiba Semiconductor and Storage - SSM6N7002BFE,LM

KEY Part #: K6525538

SSM6N7002BFE,LM Pricing (USD) [1694228PC Stock]

  • 1 pcs$0.02413
  • 4,000 pcs$0.02401

Nimewo Pati:
SSM6N7002BFE,LM
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET 2N-CH 60V 0.2A ES6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM6N7002BFE,LM electronic components. SSM6N7002BFE,LM can be shipped within 24 hours after order. If you have any demands for SSM6N7002BFE,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N7002BFE,LM Atribi pwodwi yo

Nimewo Pati : SSM6N7002BFE,LM
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET 2N-CH 60V 0.2A ES6
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200mA
RD sou (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 3.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 17pF @ 25V
Pouvwa - Max : 150mW
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : ES6

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