[4024PC Stock]
- Nimewo Pati:
- AUIRF7379Q
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N/P-CH 30V 5.8A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Diodes - RF, Transistors - FETs, MOSFETs - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies AUIRF7379Q electronic components. AUIRF7379Q can be shipped within 24 hours after order. If you have any demands for AUIRF7379Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRF7379Q Atribi pwodwi yo
Nimewo Pati :
AUIRF7379Q
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N/P-CH 30V 5.8A 8SOIC
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.8A, 4.3A
RD sou (Max) @ Id, Vgs :
45 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
520pF @ 25V
Pouvwa - Max :
2.5W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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