Nimewo Pati :
NTAT6H406NT4G
Manifakti :
ON Semiconductor
Deskripsyon :
NCH 80V 175A 2.9MOHM
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
175A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.9 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
8040pF @ 40V
Disipasyon Pouvwa (Max) :
90W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ATPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63