Nexperia USA Inc. - PSMN1R5-30BLEJ

KEY Part #: K6418188

PSMN1R5-30BLEJ Pricing (USD) [54990PC Stock]

  • 1 pcs$0.71104
  • 800 pcs$0.69541

Nimewo Pati:
PSMN1R5-30BLEJ
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 30V 120A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Single, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN1R5-30BLEJ electronic components. PSMN1R5-30BLEJ can be shipped within 24 hours after order. If you have any demands for PSMN1R5-30BLEJ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN1R5-30BLEJ Atribi pwodwi yo

Nimewo Pati : PSMN1R5-30BLEJ
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 30V 120A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.15V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 228nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 14934pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 401W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB