IXGT35N120B Pricing (USD) [7152PC Stock]
- 1 pcs$6.06586
- 30 pcs$6.03568
- Nimewo Pati:
- IXGT35N120B
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 70A 300W TO268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXGT35N120B electronic components. IXGT35N120B can be shipped within 24 hours after order. If you have any demands for IXGT35N120B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGT35N120B Atribi pwodwi yo
Nimewo Pati :
IXGT35N120B
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 70A 300W TO268
Seri :
HiPerFAST™
Estati Pati :
Active
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
70A
Kouran - Pèseptè batman (Icm) :
140A
Vce (sou) (Max) @ Vge, Ic :
3.3V @ 15V, 35A
Pouvwa - Max :
300W
Oblije chanje enèji :
3.8mJ (off)
Kalite Antre :
Standard
Gate chaje :
170nC
Td (on / off) @ 25 ° C :
50ns/180ns
Kondisyon egzamen an :
960V, 35A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè :
TO-268
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