Nimewo Pati :
TSM680P06DPQ56 RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET 2 P-CH 60V 12A 8PDFN
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
RD sou (Max) @ Id, Vgs :
68 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
870pF @ 30V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (5x6)