Nimewo Pati :
SQJ262EP-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 N-CH 60V POWERPAK SO8
Seri :
Automotive, AEC-Q101, TrenchFET®
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15A (Tc), 40A (Tc)
RD sou (Max) @ Id, Vgs :
35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 10V, 23nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
550pF @ 25V, 1260pF @ 25V
Pouvwa - Max :
27W (Tc), 48W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SO-8 Dual
Pake Aparèy Founisè :
PowerPAK® SO-8 Dual Asymmetric