[3713PC Stock]
- Nimewo Pati:
- PMWD20XN,118
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 10.4A 8TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMWD20XN,118 electronic components. PMWD20XN,118 can be shipped within 24 hours after order. If you have any demands for PMWD20XN,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMWD20XN,118 Atribi pwodwi yo
Nimewo Pati :
PMWD20XN,118
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET 2N-CH 20V 10.4A 8TSSOP
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.4A
RD sou (Max) @ Id, Vgs :
22 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ Id :
1.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
11.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
740pF @ 16V
Pouvwa - Max :
4.2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-TSSOP
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