IPG20N10S4L35AATMA1 Pricing (USD) [182536PC Stock]
- 1 pcs$0.20263
- 5,000 pcs$0.18591
- Nimewo Pati:
- IPG20N10S4L35AATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPG20N10S4L35AATMA1 electronic components. IPG20N10S4L35AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L35AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L35AATMA1 Atribi pwodwi yo
Nimewo Pati :
IPG20N10S4L35AATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 8TDSON
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A
RD sou (Max) @ Id, Vgs :
35 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 16µA
Chaje Gate (Qg) (Max) @ Vgs :
17.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1105pF @ 25V
Pouvwa - Max :
43W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
PG-TDSON-8-10
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