IXKC25N80C Pricing (USD) [7030PC Stock]
- 1 pcs$6.48039
- 50 pcs$6.44815
- Nimewo Pati:
- IXKC25N80C
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800V 25A ISOPLUS220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXKC25N80C electronic components. IXKC25N80C can be shipped within 24 hours after order. If you have any demands for IXKC25N80C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXKC25N80C Atribi pwodwi yo
Nimewo Pati :
IXKC25N80C
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800V 25A ISOPLUS220
Seri :
CoolMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
150 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
4V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4600pF @ 25V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS220™
Pake / Ka :
ISOPLUS220™
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