Infineon Technologies - SPI15N65C3XKSA1

KEY Part #: K6407115

SPI15N65C3XKSA1 Pricing (USD) [1084PC Stock]

  • 500 pcs$0.95149

Nimewo Pati:
SPI15N65C3XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 650V 15A TO262-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - RF and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPI15N65C3XKSA1 Atribi pwodwi yo

Nimewo Pati : SPI15N65C3XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V 15A TO262-3
Seri : CoolMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 280 mOhm @ 9.4A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 675µA
Chaje Gate (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 156W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3-1
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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