Manifakti :
Alpha & Omega Semiconductor Inc.
Deskripsyon :
MOSFET 2N-CH 20V 7.7A 6DFN
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.7A
RD sou (Max) @ Id, Vgs :
18 mOhm @ 7.7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1360pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SMD, Flat Lead Exposed Pad
Pake Aparèy Founisè :
6-DFN-EP (2x5)