IXTA60N20T Pricing (USD) [28664PC Stock]
- 1 pcs$1.66169
- 50 pcs$1.65342
- Nimewo Pati:
- IXTA60N20T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 200V 60A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tiristors - SCR and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA60N20T electronic components. IXTA60N20T can be shipped within 24 hours after order. If you have any demands for IXTA60N20T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA60N20T Atribi pwodwi yo
Nimewo Pati :
IXTA60N20T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 200V 60A TO-263
Seri :
Trench™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
40 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
73nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4530pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500W (Tc)
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXTA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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