IRF8010PBF Pricing (USD) [40660PC Stock]
- 1 pcs$0.92400
- 10 pcs$0.83286
- 100 pcs$0.66929
- 500 pcs$0.52058
- 1,000 pcs$0.43133
- Nimewo Pati:
- IRF8010PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 80A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF8010PBF electronic components. IRF8010PBF can be shipped within 24 hours after order. If you have any demands for IRF8010PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8010PBF Atribi pwodwi yo
Nimewo Pati :
IRF8010PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 80A TO-220AB
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
15 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3830pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
260W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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