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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. RFD16N06LESM9A

ON Semiconductor - RFD16N06LESM9A

KEY Part #: K6415786

RFD16N06LESM9A Pricing (USD) [140777PC Stock]

  • 1 pcs$0.26274
  • 2,500 pcs$0.25289
Nimewo Pati:
RFD16N06LESM9A
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 60V 16A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - JFETs, Diodes - Bridge rèktifikateur and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor RFD16N06LESM9A electronic components. RFD16N06LESM9A can be shipped within 24 hours after order. If you have any demands for RFD16N06LESM9A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFD16N06LESM9A Atribi pwodwi yo

Nimewo Pati : RFD16N06LESM9A
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 60V 16A DPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 47 mOhm @ 16A, 5V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 62nC @ 10V
Vgs (Max) : +10V, -8V
Antre kapasite (Ciss) (Max) @ Vds : 1350pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 90W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252AA
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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