SIZF906DT-T1-GE3 Pricing (USD) [125990PC Stock]
- 1 pcs$0.29504
- 3,000 pcs$0.29357
- Nimewo Pati:
- SIZF906DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2 N-CH 30V 60A POWERPAIR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - Objektif espesyal, Diodes - RF and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZF906DT-T1-GE3 electronic components. SIZF906DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF906DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF906DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZF906DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 N-CH 30V 60A POWERPAIR
Seri :
TrenchFET® Gen IV
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
60A (Tc)
RD sou (Max) @ Id, Vgs :
3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 4.5V, 92nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
2000pF @ 15V, 8200pF @ 15V
Pouvwa - Max :
38W (Tc), 83W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TA)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-PowerPair® (6x5)
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