IXFQ26N50P3 Pricing (USD) [21314PC Stock]
- 1 pcs$2.13760
- 30 pcs$2.12696
- Nimewo Pati:
- IXFQ26N50P3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 500V 26A TO-3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Rèkteur - Single, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXFQ26N50P3 electronic components. IXFQ26N50P3 can be shipped within 24 hours after order. If you have any demands for IXFQ26N50P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ26N50P3 Atribi pwodwi yo
Nimewo Pati :
IXFQ26N50P3
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 500V 26A TO-3P
Seri :
HiPerFET™, Polar3™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
26A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
230 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2220pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P
Pake / Ka :
TO-3P-3, SC-65-3
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