ON Semiconductor - FDB8030L

KEY Part #: K6401010

FDB8030L Pricing (USD) [29869PC Stock]

  • 1 pcs$1.38668
  • 800 pcs$1.37978

Nimewo Pati:
FDB8030L
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V 80A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Tiristors - SCR, Transistors - JFETs, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDB8030L electronic components. FDB8030L can be shipped within 24 hours after order. If you have any demands for FDB8030L, Please submit a Request for Quotation here or send us an email:
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ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB8030L Atribi pwodwi yo

Nimewo Pati : FDB8030L
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V 80A D2PAK
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.5 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 170nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 10500pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 187W (Tc)
Operating Tanperati : -65°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263AB
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB