[13421PC Stock]
- Nimewo Pati:
- 2N6661JTXP02
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 90V 0.86A TO-205.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Transistors - JFETs, Diodes - Bridge rèktifikateur and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix 2N6661JTXP02 electronic components. 2N6661JTXP02 can be shipped within 24 hours after order. If you have any demands for 2N6661JTXP02, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N6661JTXP02 Atribi pwodwi yo
Nimewo Pati :
2N6661JTXP02
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 90V 0.86A TO-205
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
90V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
860mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
4 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
50pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
725mW (Ta), 6.25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-39
Pake / Ka :
TO-205AD, TO-39-3 Metal Can
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