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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. APTM10HM09FT3G

Microsemi Corporation - APTM10HM09FT3G

KEY Part #: K6522650

APTM10HM09FT3G Pricing (USD) [1144PC Stock]

  • 1 pcs$38.01400
  • 100 pcs$37.82488
Nimewo Pati:
APTM10HM09FT3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET 4N-CH 100V 139A SP3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Diodes - RF, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTM10HM09FT3G electronic components. APTM10HM09FT3G can be shipped within 24 hours after order. If you have any demands for APTM10HM09FT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM10HM09FT3G Atribi pwodwi yo

Nimewo Pati : APTM10HM09FT3G
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET 4N-CH 100V 139A SP3
Seri : -
Estati Pati : Active
FET Kalite : 4 N-Channel (H-Bridge)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 139A
RD sou (Max) @ Id, Vgs : 10 mOhm @ 69.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 350nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 9875pF @ 25V
Pouvwa - Max : 390W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP3
Pake Aparèy Founisè : SP3

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