Nimewo Pati :
SI4850BDY-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 60V SO-8
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.4A (Ta), 11.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
19.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
790pF @ 30V
Disipasyon Pouvwa (Max) :
2.5W (Ta), 4.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)