Nexperia USA Inc. - BUK9Y12-55B,115

KEY Part #: K6420718

BUK9Y12-55B,115 Pricing (USD) [238385PC Stock]

  • 1 pcs$0.15516
  • 1,500 pcs$0.13713

Nimewo Pati:
BUK9Y12-55B,115
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 55V 61.8A LFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUK9Y12-55B,115 Atribi pwodwi yo

Nimewo Pati : BUK9Y12-55B,115
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 55V 61.8A LFPAK
Seri : Automotive, AEC-Q101, TrenchMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 61.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 11 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.15V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 5V
Vgs (Max) : ±15V
Antre kapasite (Ciss) (Max) @ Vds : 2880pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 106W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK56, Power-SO8
Pake / Ka : SC-100, SOT-669