Toshiba Semiconductor and Storage - TPC8208(TE12L,Q,M)

KEY Part #: K6524220

[3905PC Stock]


    Nimewo Pati:
    TPC8208(TE12L,Q,M)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET 2N-CH 20V 5A SOP8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Diodes - RF and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage TPC8208(TE12L,Q,M) electronic components. TPC8208(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for TPC8208(TE12L,Q,M), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TPC8208(TE12L,Q,M) Atribi pwodwi yo

    Nimewo Pati : TPC8208(TE12L,Q,M)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET 2N-CH 20V 5A SOP8
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A
    RD sou (Max) @ Id, Vgs : 50 mOhm @ 2.5A, 4V
    Vgs (th) (Max) @ Id : 1.2V @ 200µA
    Chaje Gate (Qg) (Max) @ Vgs : 9.5nC @ 5V
    Antre kapasite (Ciss) (Max) @ Vds : 780pF @ 10V
    Pouvwa - Max : 450mW
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.173", 4.40mm Width)
    Pake Aparèy Founisè : 8-SOP (5.5x6.0)