Infineon Technologies - IRFB4019PBF

KEY Part #: K6400285

IRFB4019PBF Pricing (USD) [54689PC Stock]

  • 1 pcs$0.68150
  • 10 pcs$0.60290
  • 100 pcs$0.47663
  • 500 pcs$0.34965
  • 1,000 pcs$0.27604

Nimewo Pati:
IRFB4019PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 150V 17A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - SCR and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFB4019PBF electronic components. IRFB4019PBF can be shipped within 24 hours after order. If you have any demands for IRFB4019PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB4019PBF Atribi pwodwi yo

Nimewo Pati : IRFB4019PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 150V 17A TO-220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 95 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 4.9V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 80W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3