Nimewo Pati :
HGT1S10N120BNS
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 35A 298W TO263AB
Estati Pati :
Not For New Designs
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
35A
Kouran - Pèseptè batman (Icm) :
80A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Oblije chanje enèji :
320µJ (on), 800µJ (off)
Td (on / off) @ 25 ° C :
23ns/165ns
Kondisyon egzamen an :
960V, 10A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB