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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - IGBTs - Single
  5. HGT1S10N120BNS

ON Semiconductor - HGT1S10N120BNS

KEY Part #: K6424802

HGT1S10N120BNS Pricing (USD) [28534PC Stock]

  • 1 pcs$1.45155
  • 800 pcs$1.44433
Nimewo Pati:
HGT1S10N120BNS
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 1200V 35A 298W TO263AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Single, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor HGT1S10N120BNS electronic components. HGT1S10N120BNS can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGT1S10N120BNS Atribi pwodwi yo

Nimewo Pati : HGT1S10N120BNS
Manifakti : ON Semiconductor
Deskripsyon : IGBT 1200V 35A 298W TO263AB
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 35A
Kouran - Pèseptè batman (Icm) : 80A
Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Pouvwa - Max : 298W
Oblije chanje enèji : 320µJ (on), 800µJ (off)
Kalite Antre : Standard
Gate chaje : 100nC
Td (on / off) @ 25 ° C : 23ns/165ns
Kondisyon egzamen an : 960V, 10A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB

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