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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDU068AN03L

ON Semiconductor - FDU068AN03L

KEY Part #: K6411215

[13867PC Stock]

    Nimewo Pati:
    FDU068AN03L
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 30V 35A I-PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDU068AN03L electronic components. FDU068AN03L can be shipped within 24 hours after order. If you have any demands for FDU068AN03L, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDU068AN03L Atribi pwodwi yo

    Nimewo Pati : FDU068AN03L
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 30V 35A I-PAK
    Seri : PowerTrench®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Ta), 35A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 5.7 mOhm @ 35A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2525pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 80W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I-PAK
    Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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