IXYS - IXFP34N65X2

KEY Part #: K6398661

IXFP34N65X2 Pricing (USD) [17578PC Stock]

  • 1 pcs$2.57809
  • 10 pcs$2.30266
  • 100 pcs$1.88818
  • 500 pcs$1.52896
  • 1,000 pcs$1.28949

Nimewo Pati:
IXFP34N65X2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 650V 34A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFP34N65X2 electronic components. IXFP34N65X2 can be shipped within 24 hours after order. If you have any demands for IXFP34N65X2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFP34N65X2 Atribi pwodwi yo

Nimewo Pati : IXFP34N65X2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 650V 34A TO-220
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 34A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 105 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3330pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 540W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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