Rohm Semiconductor - SP8M51FRATB

KEY Part #: K6522017

SP8M51FRATB Pricing (USD) [134137PC Stock]

  • 1 pcs$0.27574

Nimewo Pati:
SP8M51FRATB
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
4V DRIVE NCHPCH MOSFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SP8M51FRATB Atribi pwodwi yo

Nimewo Pati : SP8M51FRATB
Manifakti : Rohm Semiconductor
Deskripsyon : 4V DRIVE NCHPCH MOSFET
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta), 2.5A (Ta)
RD sou (Max) @ Id, Vgs : 170 mOhm @ 3A, 10V, 290 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 8.5nC @ 5V, 12.5nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 610pF @ 10V, 1550pF @ 25V
Pouvwa - Max : 2W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP