STMicroelectronics - STGW40H65DFB

KEY Part #: K6422995

STGW40H65DFB Pricing (USD) [21697PC Stock]

  • 1 pcs$1.77602
  • 10 pcs$1.59710
  • 100 pcs$1.30839
  • 500 pcs$1.05669
  • 1,000 pcs$0.89118

Nimewo Pati:
STGW40H65DFB
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 650V 80A 283W TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Diodes - RF, Transistors - Bipolè (BJT) - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGW40H65DFB electronic components. STGW40H65DFB can be shipped within 24 hours after order. If you have any demands for STGW40H65DFB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGW40H65DFB Atribi pwodwi yo

Nimewo Pati : STGW40H65DFB
Manifakti : STMicroelectronics
Deskripsyon : IGBT 650V 80A 283W TO-247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 80A
Kouran - Pèseptè batman (Icm) : 160A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 40A
Pouvwa - Max : 283W
Oblije chanje enèji : 498µJ (on), 363µJ (off)
Kalite Antre : Standard
Gate chaje : 210nC
Td (on / off) @ 25 ° C : 40ns/142ns
Kondisyon egzamen an : 400V, 40A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 62ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247