ON Semiconductor - FQA85N06

KEY Part #: K6410268

[14195PC Stock]


    Nimewo Pati:
    FQA85N06
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 60V 100A TO-3P.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Transistors - JFETs and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQA85N06 electronic components. FQA85N06 can be shipped within 24 hours after order. If you have any demands for FQA85N06, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQA85N06 Atribi pwodwi yo

    Nimewo Pati : FQA85N06
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 60V 100A TO-3P
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 10 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 112nC @ 10V
    Vgs (Max) : ±25V
    Antre kapasite (Ciss) (Max) @ Vds : 4120pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 214W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-3P
    Pake / Ka : TO-3P-3, SC-65-3